SiC高溫退火設備
所屬分類：
第三代半導體工藝設備
第一代半導體工藝設備
概要：
? 專門用于硅碳化合物(SiC) 的離子激活和退火處理，可實現(xiàn)SiC片在高溫真空環(huán)境下完成活性工藝 ? 設備適用于SiC基功率器件制造中的離子激活和退火工藝環(huán)節(jié) ? 加熱腔與工藝腔獨立密閉設計，提供工藝腔的潔凈度
關鍵詞：
SiC高溫退火
SiC高溫退火設備
產(chǎn)品概述/Product Introduction：
♦ 專門用于硅碳化合物(SiC) 的離子激活和退火處理，可實現(xiàn)SiC片在高溫真空環(huán)境下完成活性工藝
It is specially used for ion activation and annealing treatment of silicon carbon compound (SiC), which can realize the active process of Sic wafer in high temperature and vacuum environment.
♦ 設備適用于SiC基功率器件制造中的離子激活和退火工藝環(huán)節(jié)
The equipment is suitable for ion activation and annealing process in the manufacture of SiC-based power devices
♦ 加熱腔與工藝腔獨立密閉設計，提供工藝腔的潔凈度
The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
產(chǎn)品特點/Product Characteristics：
♦ 采用立式結構、工藝控制好、溫度分布均勻、氣流穩(wěn)定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot自動傳送(可選)
Robot Auto Transfer (Optional)
♦ 多點控溫，溫度均勻
Multi-point temperature control, uniform temperature
♦ 具有多種報警功能及安全保護功能
Has various alarm functions and safety protection functions
♦ 加熱腔與工藝腔獨立密閉設計，提供工藝腔的潔凈度
The heating chamber and the process chamber are designed independently to provide the cleanliness of the process chamber
技術指標/Technical Indicators：
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晶片尺寸: 4/6英寸 Wafer size: 4/6 inches |
工作溫度范圍: 800-2000°C Perating temperature range: 800-2000°C |
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裝片量: 50/80片 Loading capacity: 50/80 tablets |
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應用范圍/Scope：
♦ 用于SiC基半導體材料的離子激活和退火處理
lon activation and annealing treatment for SiC-based semiconductor materials
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